Data for Thermally activated defects in float zone silicon: Effect of nitrogen on the introduction of deep level states

John D. Murphy (Contributor)
Jack Mullins (Creator)
Matthew Halsall (Contributor)
Michelle Vaqueiro Contreras (Contributor)
Leif Jensen (Contributor)
Jarosław Jabłoński (Contributor)
Vladimir P. Markevich (Contributor)
Nicholas E. Grant (Contributor)
Anthony Peaker (Contributor)

EEE - Academic & Research

Dataset

1 Article

1 results

2018
Thermally activated defects in float zone silicon: Effect of nitrogen on the introduction of deep level states
Mullins, J., Markevich, V. P., Vaqueiro-contreras, M., Grant, N. E., Jensen, L., Jabłoński, J., Murphy, J. D., Halsall, M. P. & Peaker, A. R., 21 Jul 2018, In: Journal of Applied Physics. 124, 3, p. 035701
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