InGaN-GaN quantum wells: their luminescent and nano-structural properties

J. S. Barnard; D. M. Graham; T. M. Smeeton; M. J. Kappers; P. Dawson; M. Godfrey; C. J. Humphreys

doi:10.1007/3-540-31915-8

InGaN-GaN quantum wells: their luminescent and nano-structural properties

J. S. Barnard
, D. M. Graham
, T. M. Smeeton
, M. J. Kappers
, P. Dawson
, M. Godfrey
, C. J. Humphreys

Research output: Chapter in Book/Conference proceeding › Conference contribution › peer-review

Original language	English
Title of host publication	Proc. 14th Conference on Microscopy of Semiconducting Materials
Place of Publication	Microscopy of Semiconducting Materials
Publisher	Springer Nature
Pages	25-28
Number of pages	4
Volume	107
DOIs	https://doi.org/10.1007/3-540-31915-8
Publication status	Published - 2005
Event	14th Conference on Microscopy of Semiconducting Materials - Oxford (England) Duration: 11 Apr 2005 → 14 Apr 2005

Conference

Conference	14th Conference on Microscopy of Semiconducting Materials
City	Oxford (England)
Period	11/04/05 → 14/04/05

Access to Document

10.1007/3-540-31915-8

Cite this

@inproceedings{a436cdf146b145a59a5b2b20b7ac00fa,

title = "InGaN-GaN quantum wells: their luminescent and nano-structural properties",

author = "Barnard, \{J. S.\} and Graham, \{D. M.\} and Smeeton, \{T. M.\} and Kappers, \{M. J.\} and P. Dawson and M. Godfrey and Humphreys, \{C. J.\}",

year = "2005",

doi = "10.1007/3-540-31915-8",

language = "English",

volume = "107",

pages = "25--28",

booktitle = "Proc. 14th Conference on Microscopy of Semiconducting Materials",

publisher = "Springer Nature",

address = "United States",

note = "14th Conference on Microscopy of Semiconducting Materials ; Conference date: 11-04-2005 Through 14-04-2005",

}

Barnard, JS, Graham, DM, Smeeton, TM, Kappers, MJ, Dawson, P, Godfrey, M & Humphreys, CJ 2005, InGaN-GaN quantum wells: their luminescent and nano-structural properties. in Proc. 14th Conference on Microscopy of Semiconducting Materials. vol. 107, Springer Nature, Microscopy of Semiconducting Materials, pp. 25-28, 14th Conference on Microscopy of Semiconducting Materials, Oxford (England), 11/04/05. https://doi.org/10.1007/3-540-31915-8

InGaN-GaN quantum wells: their luminescent and nano-structural properties. / Barnard, J. S.; Graham, D. M.; Smeeton, T. M. et al.
Proc. 14th Conference on Microscopy of Semiconducting Materials. Vol. 107 Microscopy of Semiconducting Materials: Springer Nature, 2005. p. 25-28.

Research output: Chapter in Book/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - InGaN-GaN quantum wells: their luminescent and nano-structural properties

AU - Barnard, J. S.

AU - Graham, D. M.

AU - Smeeton, T. M.

AU - Kappers, M. J.

AU - Dawson, P.

AU - Godfrey, M.

AU - Humphreys, C. J.

PY - 2005

Y1 - 2005

U2 - 10.1007/3-540-31915-8

DO - 10.1007/3-540-31915-8

M3 - Conference contribution

VL - 107

SP - 25

EP - 28

BT - Proc. 14th Conference on Microscopy of Semiconducting Materials

PB - Springer Nature

CY - Microscopy of Semiconducting Materials

T2 - 14th Conference on Microscopy of Semiconducting Materials

Y2 - 11 April 2005 through 14 April 2005

ER -