Physical modelling of a step-graded AlGaAs/GaAs Gunn diode and investigation of hot electron injector performance

J. F. Amir; N. Farrington; T. Tauqeer; M. Missous

doi:10.1109/ASDAM.2008.4743356

Physical modelling of a step-graded AlGaAs/GaAs Gunn diode and investigation of hot electron injector performance

J. F. Amir, N. Farrington, T. Tauqeer, M. Missous

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

This paper presents continuing work on the development of a novel physical model for an advanced GaAs Gunn diode with hot-electron injection. The device itself is commercially manufactured by e2v Technologies (UK) Ltd. for use in 77GHz automotive Adaptive Cruise Control (ACC) systems. A 2D model has been developed using SIL VACO. Simulated IV characteristics are presented and shown to match well with measured data over a range of temperatures. The relationship between doping spike carrier concentration in the injector and asymmetry in the device's IV characteristic is then examined and compared to measured data. © 2008 IEEE.

Original language	English
Title of host publication	ASDAM 2008 - Conference Proceedings of the 7th International Conference on Advanced Semiconductor Devices and Microsystems\|ASDAM - Conf. Proc. Int. Conf. Adv. Semicond. Dev. Microsystems
Pages	51-54
Number of pages	3
DOIs	https://doi.org/10.1109/ASDAM.2008.4743356
Publication status	Published - 2008
Event	7th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2008 - Smolenice Duration: 1 Jul 2008 → … http://<Go to ISI>://000263223200047

Conference

Conference	7th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2008
City	Smolenice
Period	1/07/08 → …
Internet address	http://<Go to ISI>://000263223200047

Access to Document

10.1109/ASDAM.2008.4743356

Molecular Beam Epitaxy applied to quantum devices for industrial applications
Missous, M. (Participant), (Participant), Haned, N. (Participant), (Participant), Boudejelida, B. (Participant) & (Participant)
Impact: Economic, Technological

Cite this

Amir, J. F., Farrington, N., Tauqeer, T., & Missous, M. (2008). Physical modelling of a step-graded AlGaAs/GaAs Gunn diode and investigation of hot electron injector performance. In ASDAM 2008 - Conference Proceedings of the 7th International Conference on Advanced Semiconductor Devices and Microsystems|ASDAM - Conf. Proc. Int. Conf. Adv. Semicond. Dev. Microsystems (pp. 51-54) https://doi.org/10.1109/ASDAM.2008.4743356

Amir, J. F. ; Farrington, N. ; Tauqeer, T. et al. / Physical modelling of a step-graded AlGaAs/GaAs Gunn diode and investigation of hot electron injector performance. ASDAM 2008 - Conference Proceedings of the 7th International Conference on Advanced Semiconductor Devices and Microsystems|ASDAM - Conf. Proc. Int. Conf. Adv. Semicond. Dev. Microsystems. 2008. pp. 51-54

@inproceedings{1fafa0ac757648a189aef7215f15ce73,

title = "Physical modelling of a step-graded AlGaAs/GaAs Gunn diode and investigation of hot electron injector performance",

abstract = "This paper presents continuing work on the development of a novel physical model for an advanced GaAs Gunn diode with hot-electron injection. The device itself is commercially manufactured by e2v Technologies (UK) Ltd. for use in 77GHz automotive Adaptive Cruise Control (ACC) systems. A 2D model has been developed using SIL VACO. Simulated IV characteristics are presented and shown to match well with measured data over a range of temperatures. The relationship between doping spike carrier concentration in the injector and asymmetry in the device's IV characteristic is then examined and compared to measured data. {\textcopyright} 2008 IEEE.",

author = "Amir, {J. F.} and N. Farrington and T. Tauqeer and M. Missous",

note = "Amir, F. Farrington, N. Tauqeer, T. Missous, M.; 7th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2008 ; Conference date: 01-07-2008",

year = "2008",

doi = "10.1109/ASDAM.2008.4743356",

language = "English",

isbn = "9781424423262",

pages = "51--54",

booktitle = "ASDAM 2008 - Conference Proceedings of the 7th International Conference on Advanced Semiconductor Devices and Microsystems|ASDAM - Conf. Proc. Int. Conf. Adv. Semicond. Dev. Microsystems",

url = "http://<Go to ISI>://000263223200047",

}

Amir, JF, Farrington, N, Tauqeer, T & Missous, M 2008, Physical modelling of a step-graded AlGaAs/GaAs Gunn diode and investigation of hot electron injector performance. in ASDAM 2008 - Conference Proceedings of the 7th International Conference on Advanced Semiconductor Devices and Microsystems|ASDAM - Conf. Proc. Int. Conf. Adv. Semicond. Dev. Microsystems. pp. 51-54, 7th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2008, Smolenice, 1/07/08. https://doi.org/10.1109/ASDAM.2008.4743356

Physical modelling of a step-graded AlGaAs/GaAs Gunn diode and investigation of hot electron injector performance. / Amir, J. F.; Farrington, N.; Tauqeer, T. et al.
ASDAM 2008 - Conference Proceedings of the 7th International Conference on Advanced Semiconductor Devices and Microsystems|ASDAM - Conf. Proc. Int. Conf. Adv. Semicond. Dev. Microsystems. 2008. p. 51-54.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Physical modelling of a step-graded AlGaAs/GaAs Gunn diode and investigation of hot electron injector performance

AU - Amir, J. F.

AU - Farrington, N.

AU - Tauqeer, T.

AU - Missous, M.

N1 - Amir, F. Farrington, N. Tauqeer, T. Missous, M.

PY - 2008

Y1 - 2008

N2 - This paper presents continuing work on the development of a novel physical model for an advanced GaAs Gunn diode with hot-electron injection. The device itself is commercially manufactured by e2v Technologies (UK) Ltd. for use in 77GHz automotive Adaptive Cruise Control (ACC) systems. A 2D model has been developed using SIL VACO. Simulated IV characteristics are presented and shown to match well with measured data over a range of temperatures. The relationship between doping spike carrier concentration in the injector and asymmetry in the device's IV characteristic is then examined and compared to measured data. © 2008 IEEE.

AB - This paper presents continuing work on the development of a novel physical model for an advanced GaAs Gunn diode with hot-electron injection. The device itself is commercially manufactured by e2v Technologies (UK) Ltd. for use in 77GHz automotive Adaptive Cruise Control (ACC) systems. A 2D model has been developed using SIL VACO. Simulated IV characteristics are presented and shown to match well with measured data over a range of temperatures. The relationship between doping spike carrier concentration in the injector and asymmetry in the device's IV characteristic is then examined and compared to measured data. © 2008 IEEE.

U2 - 10.1109/ASDAM.2008.4743356

DO - 10.1109/ASDAM.2008.4743356

M3 - Conference contribution

SN - 9781424423262

SP - 51

EP - 54

BT - ASDAM 2008 - Conference Proceedings of the 7th International Conference on Advanced Semiconductor Devices and Microsystems|ASDAM - Conf. Proc. Int. Conf. Adv. Semicond. Dev. Microsystems

T2 - 7th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2008

Y2 - 1 July 2008

ER -

Amir JF, Farrington N, Tauqeer T, Missous M. Physical modelling of a step-graded AlGaAs/GaAs Gunn diode and investigation of hot electron injector performance. In ASDAM 2008 - Conference Proceedings of the 7th International Conference on Advanced Semiconductor Devices and Microsystems|ASDAM - Conf. Proc. Int. Conf. Adv. Semicond. Dev. Microsystems. 2008. p. 51-54 doi: 10.1109/ASDAM.2008.4743356

Physical modelling of a step-graded AlGaAs/GaAs Gunn diode and investigation of hot electron injector performance

Abstract

Conference

Access to Document

Fingerprint

Impacts

Molecular Beam Epitaxy applied to quantum devices for industrial applications

Cite this